Semiconductor inspection apparatus and probe unit
Provided is a semiconductor inspection apparatus capable of performing high-speed response analysis for analysis of a failure in a microdevice constituting an LSI. In order to achieve this, the semiconductor inspection apparatus comprises: a vacuum chamber 3; a sample stand 4 which is disposed in th...
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creator | KOMORI, MASAAKI OKI, KATSUO |
description | Provided is a semiconductor inspection apparatus capable of performing high-speed response analysis for analysis of a failure in a microdevice constituting an LSI. In order to achieve this, the semiconductor inspection apparatus comprises: a vacuum chamber 3; a sample stand 4 which is disposed in the vacuum chamber and on which a sample 6 is placed; an electronic optical system 1 which is disposed so as to be able to irradiate the sample from above with an electron beam; a plurality of probe units 24 which are connected, via a coaxial cable 10, to external apparatuses 11, 12 disposed outside the vacuum chamber; and an electrode 5 which is disposed on or near the sample stand. The probe units 24 each include a measurement probe 8 which is brought into contact with the sample, a GND terminal 9 which is connected to the electrode 5, and a probe holder 7 which holds the measurement probe and the GND terminal, connects a signal wire of the coaxial cable to the measurement probe, and connects a GND wire of the coax |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW202007978A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW202007978A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW202007978A3</originalsourceid><addsrcrecordid>eNrjZDAMTs3NTM7PSylNLskvUsjMKy5ITS7JzM9TSCwoSCxKLCktVkjMS1EoKMpPSlUozcss4WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8SHhRgZGBgbmluYWjsbEqAEA3RksaQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor inspection apparatus and probe unit</title><source>esp@cenet</source><creator>KOMORI, MASAAKI ; OKI, KATSUO</creator><creatorcontrib>KOMORI, MASAAKI ; OKI, KATSUO</creatorcontrib><description>Provided is a semiconductor inspection apparatus capable of performing high-speed response analysis for analysis of a failure in a microdevice constituting an LSI. In order to achieve this, the semiconductor inspection apparatus comprises: a vacuum chamber 3; a sample stand 4 which is disposed in the vacuum chamber and on which a sample 6 is placed; an electronic optical system 1 which is disposed so as to be able to irradiate the sample from above with an electron beam; a plurality of probe units 24 which are connected, via a coaxial cable 10, to external apparatuses 11, 12 disposed outside the vacuum chamber; and an electrode 5 which is disposed on or near the sample stand. The probe units 24 each include a measurement probe 8 which is brought into contact with the sample, a GND terminal 9 which is connected to the electrode 5, and a probe holder 7 which holds the measurement probe and the GND terminal, connects a signal wire of the coaxial cable to the measurement probe, and connects a GND wire of the coax</description><language>chi ; eng</language><subject>APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM] ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; SCANNING-PROBE TECHNIQUES OR APPARATUS ; TESTING</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200216&DB=EPODOC&CC=TW&NR=202007978A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200216&DB=EPODOC&CC=TW&NR=202007978A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KOMORI, MASAAKI</creatorcontrib><creatorcontrib>OKI, KATSUO</creatorcontrib><title>Semiconductor inspection apparatus and probe unit</title><description>Provided is a semiconductor inspection apparatus capable of performing high-speed response analysis for analysis of a failure in a microdevice constituting an LSI. In order to achieve this, the semiconductor inspection apparatus comprises: a vacuum chamber 3; a sample stand 4 which is disposed in the vacuum chamber and on which a sample 6 is placed; an electronic optical system 1 which is disposed so as to be able to irradiate the sample from above with an electron beam; a plurality of probe units 24 which are connected, via a coaxial cable 10, to external apparatuses 11, 12 disposed outside the vacuum chamber; and an electrode 5 which is disposed on or near the sample stand. The probe units 24 each include a measurement probe 8 which is brought into contact with the sample, a GND terminal 9 which is connected to the electrode 5, and a probe holder 7 which holds the measurement probe and the GND terminal, connects a signal wire of the coaxial cable to the measurement probe, and connects a GND wire of the coax</description><subject>APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM]</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>SCANNING-PROBE TECHNIQUES OR APPARATUS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAMTs3NTM7PSylNLskvUsjMKy5ITS7JzM9TSCwoSCxKLCktVkjMS1EoKMpPSlUozcss4WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8SHhRgZGBgbmluYWjsbEqAEA3RksaQ</recordid><startdate>20200216</startdate><enddate>20200216</enddate><creator>KOMORI, MASAAKI</creator><creator>OKI, KATSUO</creator><scope>EVB</scope></search><sort><creationdate>20200216</creationdate><title>Semiconductor inspection apparatus and probe unit</title><author>KOMORI, MASAAKI ; OKI, KATSUO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202007978A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM]</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>SCANNING-PROBE TECHNIQUES OR APPARATUS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>KOMORI, MASAAKI</creatorcontrib><creatorcontrib>OKI, KATSUO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KOMORI, MASAAKI</au><au>OKI, KATSUO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor inspection apparatus and probe unit</title><date>2020-02-16</date><risdate>2020</risdate><abstract>Provided is a semiconductor inspection apparatus capable of performing high-speed response analysis for analysis of a failure in a microdevice constituting an LSI. In order to achieve this, the semiconductor inspection apparatus comprises: a vacuum chamber 3; a sample stand 4 which is disposed in the vacuum chamber and on which a sample 6 is placed; an electronic optical system 1 which is disposed so as to be able to irradiate the sample from above with an electron beam; a plurality of probe units 24 which are connected, via a coaxial cable 10, to external apparatuses 11, 12 disposed outside the vacuum chamber; and an electrode 5 which is disposed on or near the sample stand. The probe units 24 each include a measurement probe 8 which is brought into contact with the sample, a GND terminal 9 which is connected to the electrode 5, and a probe holder 7 which holds the measurement probe and the GND terminal, connects a signal wire of the coaxial cable to the measurement probe, and connects a GND wire of the coax</abstract><oa>free_for_read</oa></addata></record> |
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language | chi ; eng |
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subjects | APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM] MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SCANNING-PROBE TECHNIQUES OR APPARATUS TESTING |
title | Semiconductor inspection apparatus and probe unit |
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