Semiconductor structure having metal gate and forming method thereof

Semiconductor structure having metal gate and forming method thereof

A semiconductor structure having a metal gate includes a dielectric layer. The dielectric layer having a recess is disposed on a substrate, wherein the dielectric layer has a top part and a bottom part, and the tensile stress of the top part is larger than the tensile stress of the bottom part, ther...

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Bibliographische Detailangaben
Hauptverfasser: HUANG, HUNG-JEN, FENG, HAO, WANG, SHAO-WEI, HUANG, PING-WEI, CHEN, YI-WEN, CHUANG, YUEHI, LIN, JING-YI, WU, HUNG-YI
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor structure having a metal gate includes a dielectric layer. The dielectric layer having a recess is disposed on a substrate, wherein the dielectric layer has a top part and a bottom part, and the tensile stress of the top part is larger than the tensile stress of the bottom part, thereby the recess having a sidewall profile tapering from bottom to top. The present invention also provides a method of forming said semiconductor structure.