Semiconductor memory device and a method for providing the same

A semiconductor memory device and method for providing the semiconductor memory device are described. The semiconductor memory device incudes a ferroelectric capacitor. The ferroelectric capacitor includes a first electrode, a second electrode and a multilayer insulator structure between the first a...

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Bibliographische Detailangaben
Hauptverfasser: RAKSHIT, TITASH, KITTL, JORGE ADRIAN, HATCHER, RYAN MICHAEL, OBRADOVIC, BORNA JOSIP
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A semiconductor memory device and method for providing the semiconductor memory device are described. The semiconductor memory device incudes a ferroelectric capacitor. The ferroelectric capacitor includes a first electrode, a second electrode and a multilayer insulator structure between the first and second electrodes. The multilayer insulator structure includes at least one ferroelectric layer and at least one dielectric layer. The at least one ferroelectric layer and the at least one dielectric layer share at least one interface and have a strong polarization coupling.