Target and process for producing a target

Target for physical vapour phase deposition having the following chemical composition: - 95 mol% to 100 mol% of a mixture of at least two of the following compounds: titanium diboride (TiB2) and/or vanadium diboride (VB2) and/or mixed phases ((Ti,V)B2) of titanium diboride (TiB2) and vanadium dibori...

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Bibliographische Detailangaben
Hauptverfasser: WOERLE, SABINE, POLICIK, PETER
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:Target for physical vapour phase deposition having the following chemical composition: - 95 mol% to 100 mol% of a mixture of at least two of the following compounds: titanium diboride (TiB2) and/or vanadium diboride (VB2) and/or mixed phases ((Ti,V)B2) of titanium diboride (TiB2) and vanadium diboride (VB2) - 0.01 mol% to 5 mol% of carbon (C) - less than 0.01 mol% of borides other than titanium diboride (TiB2) and/or vanadium diboride (VB2) and/or mixed phases ((Ti,V)B2) of titanium diboride (TiB2) and vanadium diboride (VB2), wherein in respect of the metallic purity the sum of the mixture of titanium diboride (TiB2) and/or vanadium diboride (VB2) and/or mixed phases ((Ti,V)B2) of titanium diboride (TiB2) and vanadium diboride (VB2) and the carbon (C) amounts to at least 99.8 mol%, and having the following physical properties: - a density greater than 90%, preferably greater than 95%, of the theoretical density of the chemical composition defined above - an average grain size of grains of the mixture of tita