Monolithic segmented LED array architecture with transparent common N-contact

Monolithic segmented LED array architecture with transparent common N-contact

A light emitting diode (LED) array may include an epitaxial layer comprising a first pixel and a second pixel separated by an isolation region. A reflective layer may be formed on the epitaxial layer. A p-type contact layer may be formed on the reflective layer. The isolation region may have a width...

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Bibliographische Detailangaben
Hauptverfasser: SHARMA, RAJAT, GORDON, LUKE, TANDON, ASHISH, FLEMISH, JOSEPH ROBERT, YOUNG, ERIK, PAPOU, ANDREI, YU, WEN, SHEN, YUN
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A light emitting diode (LED) array may include an epitaxial layer comprising a first pixel and a second pixel separated by an isolation region. A reflective layer may be formed on the epitaxial layer. A p-type contact layer may be formed on the reflective layer. The isolation region may have a width that is at least a width of a trench formed in a p-type contact layer.