Etchant composition not containing fluorine capable of controlling molybdenum residue and avoiding undercut when etching a molybdenum-copper alloy film
The present invention discloses a molybdenum-copper alloy film etchant composition not containing fluorine which is used in a liquid crystal display device, an organic light emitting diode display device, or the like. The molybdenum-copper alloy film etchant composition includes an etchant compositi...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The present invention discloses a molybdenum-copper alloy film etchant composition not containing fluorine which is used in a liquid crystal display device, an organic light emitting diode display device, or the like. The molybdenum-copper alloy film etchant composition includes an etchant composition and a molybdenum-copper etchant composition. The etchant composition includes: 5 weight% to 20 weight% of hydrogen peroxide; 0.01 weight% to 1.5 weight% of 4-nitrogen cyclic compound; 0.01 weight% to 1.5 weight% of 3-nitrogen cyclic compound; 0.01 weight% to 1 weight% of aromatic compound; 3 weight% to 10 weight% of amine compound; and water. The molybdenum-copper etchant composition includes: 1 weight% to 5 weight% of hydrogen peroxide stabilizer; 1 weight% to 5 weight% of organic acid; 0.1 weight% to 5 weight% of inorganic acid; and 1 weight% to 5 weight% of sulfonic acid compound. |
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