Method for forming a chemical guiding structure on a substrate and chemoepitaxy method

The invention concerns a method for forming a chemical guiding structure intended for self-assembly of a block copolymer by chemoepitaxy, where the method comprises the following steps: -forming on a substrate (100) a functionalisation layer (220) made of a first polymer material (140) having a firs...

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Bibliographische Detailangaben
Hauptverfasser:	GHARBI, AHMED, PAQUET, ANNE, TIRON, RALUCA, NAVARRO, CHRISTOPHE, CHEVALIER, XAVIER, CLAVEAU, GUILLAUME, PAIN, LAURENT
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MATERIALS THEREFOR MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	The invention concerns a method for forming a chemical guiding structure intended for self-assembly of a block copolymer by chemoepitaxy, where the method comprises the following steps: -forming on a substrate (100) a functionalisation layer (220) made of a first polymer material (140) having a first chemical affinity with respect to the block copolymer; -forming on the substrate guiding patterns (210) made of a second polymer material having a second chemical affinity with respect to the block copolymer, different from the first chemical affinity, and wherein the guiding patterns (210) have a critical dimension of less than 12.5 nm and are formed by means of a mask comprising spacers (311).