Process for the generation of metal-containing films

The present invention is in the field of processes for preparing inorganic metal-containing films. The process for preparing inorganic metal-containing films comprising bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state wherein A is NR2 or OR wi...

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Bibliographische Detailangaben
Hauptverfasser:	WEIGUNY, SABINE, MAYR, LUKAS, WINTER, CHARLES HARTGER, WALDMANN, DANIEL, BLAKENEY, KYLE, SCHWEINFURTH, DAVID DOMINIQUE, KLENK, SINJA VERENA, WEERATHUNGA SIRIKKATHUGE, NILANKA, KARUNARATNE, THARINDU MALAWARA ARACHCHIGE NIMANTHAKA
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention is in the field of processes for preparing inorganic metal-containing films. The process for preparing inorganic metal-containing films comprising bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state wherein A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 1, 2 or 3, and R' is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, wherein if n is 2 and E is NR or A is OR, at least one R in NR or OR bears no hydrogen atom in the 1-position.