Chemical mechanical polishing slurry
The invention discloses a chemical mechanical polishing slurry, the chemical mechanical polishing slurry comprising silica abrasive particles, corrosion inhibitor, complexing agent, oxidant, and at least one kind of polyacrylic anionic surfactants. The chemical mechanical polishing slurry of the inv...
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| Hauptverfasser: | , , , , , , , |
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The invention discloses a chemical mechanical polishing slurry, the chemical mechanical polishing slurry comprising silica abrasive particles, corrosion inhibitor, complexing agent, oxidant, and at least one kind of polyacrylic anionic surfactants. The chemical mechanical polishing slurry of the invention can not only enhance the polishing rate of the Cu, but also reduce the polishing rate of Ta, thus, it can improve the dishing on the copper line and erosion of the dielectric layer after polishing. |
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