Carbon nanotube growth substrate and carbon nanotube production method

The purpose of the present invention is to not cause cracking in an intermediary layer when heating a carbon nanotube growth substrate to a carbon nanotube growth temperature, even when heating at a high heating rate. This carbon nanotube growth substrate (1) is provided with a base material (2) for...

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Bibliographische Detailangaben
1. Verfasser:	MIZUTA, KENJI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMISTRY COMPOUNDS THEREOF INORGANIC CHEMISTRY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY NANOTECHNOLOGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES THEIR RELEVANT APPARATUS TRANSPORTING
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Beschreibung
Zusammenfassung:	The purpose of the present invention is to not cause cracking in an intermediary layer when heating a carbon nanotube growth substrate to a carbon nanotube growth temperature, even when heating at a high heating rate. This carbon nanotube growth substrate (1) is provided with a base material (2) formed from a metal, a silica layer (3) formed on the surface of the base material (2) and containing silicon oxide, and a catalyst layer (4) formed on the surface of the silica layer (3) opposite the side of the base material (2). Represented by the compositional formula SiOx, the siliconoxide in the silica layer (3) has an x value less than 2.