Through-electrode substrate and semiconductor device using through-electrode substrate

This through-electrode substrate comprises: a substrate constituted by an inorganic material; first wiring disposed on the substrate; a through-hole disposed on the substrate at a position apart from the first wiring; a through-electrode disposed on the inner wall of the through-hole; and second wir...

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Bibliographische Detailangaben
Hauptverfasser: NARITA, YUJI, SASAO, TOSHIO, CHIGIRA, ATSUKO, TAKAHASHI, NAOHIRO, NAKAZAWA, SUSUMU, FURUSHOU, HIROKI
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:This through-electrode substrate comprises: a substrate constituted by an inorganic material; first wiring disposed on the substrate; a through-hole disposed on the substrate at a position apart from the first wiring; a through-electrode disposed on the inner wall of the through-hole; and second wiring connecting the first wiring and the through-electrode. According to the present disclosure, electrical continuity between the through-electrode and the wiring on the substrate is ensured in a high aspect ratio through-electrode substrate using a glass substrate, and a through-electrode substrate with improved electrical reliability and a method for producing the same can be provided.