Low K dielectric compositions for high frequency applications

A low K value, high Q value, low firing dielectric material and method of forming a fired dielectric material is presented. The dielectric material can be fired below 950 DEG C or below 1100 DEG C, has a K value of less than about 8 at 10-30 GHz and a Q value of greater than 500 or greater than 1000...

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Hauptverfasser: WANG, STANLEY ZHING, WIDLEWSKI, DAVID L, MALONEY, JOHN J, MARLEY, PETER, SAKOSKE, GEORGE E, COFFEY, THOMAS JOSEPH, BROWN, ORVILLE W, TORMEY, ELLEN S, MEGHERHI, MOHAMMED H, GLEASON, CODY J, SRIDHARAN, SRINIVASAN, DAVIS, JACKIE D, HER, YIE-SHEIN
Format: Patent
Sprache:chi ; eng
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