Low K dielectric compositions for high frequency applications
A low K value, high Q value, low firing dielectric material and method of forming a fired dielectric material is presented. The dielectric material can be fired below 950 DEG C or below 1100 DEG C, has a K value of less than about 8 at 10-30 GHz and a Q value of greater than 500 or greater than 1000...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | A low K value, high Q value, low firing dielectric material and method of forming a fired dielectric material is presented. The dielectric material can be fired below 950 DEG C or below 1100 DEG C, has a K value of less than about 8 at 10-30 GHz and a Q value of greater than 500 or greater than 1000 at 10-30 GHz. The dielectric material includes, before firing a solids portion including 10-95 wt% or 10-99 wt% silica powder and 5-90 wt% or 1-90 wt% glass component. The glass component includes 50-90 mole% SiO2, 5-35 mole% or 0.1-35 mole% B2O3, 0.1-10 mole% or 0.1-25 mole% Al2O3, 0.1-10 mole% K2O, 0.1-10 mole% Na2O, 0.1-20 mole% Li2O, 0.1-30 mole% F. The total amount of Li2O + Na2O + K2O is 0.1-30 mole% of the glass component. The silica powder can be amorphous or crystalline. |
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