Semiconductor device, semiconductor device manufacturing method and overlay error measurement method for semiconductor device
An overlay-error-measurement method for a semiconductor device is provided. The method includes performing a diffraction-based-overlay-error measurement on a first test target of a substrate to respectively obtain first and second diffraction intensity differences corresponding to first and second s...
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| creator | LIN, HSININ CHANG, CHI-KANG FU, SHIHI TSENG, YUN-HENG WANG, YUING CHEN, KAI-HSIUNG CHU, JIA-HONG CHENG, POUNG SU, HSIANG-YU CHEN, LONG-YI CHEN, KUEI-SHUN |
| description | An overlay-error-measurement method for a semiconductor device is provided. The method includes performing a diffraction-based-overlay-error measurement on a first test target of a substrate to respectively obtain first and second diffraction intensity differences corresponding to first and second superimposed structures of the first test target. The method further includes obtaining a third diffraction intensity difference corresponding to the first test target based on the average of the first and second diffraction intensity differences. |
| format | Patent |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor device, semiconductor device manufacturing method and overlay error measurement method for semiconductor device |
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