Semiconductor device, semiconductor device manufacturing method and overlay error measurement method for semiconductor device

Semiconductor device, semiconductor device manufacturing method and overlay error measurement method for semiconductor device

An overlay-error-measurement method for a semiconductor device is provided. The method includes performing a diffraction-based-overlay-error measurement on a first test target of a substrate to respectively obtain first and second diffraction intensity differences corresponding to first and second s...

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Bibliographische Detailangaben
Hauptverfasser: LIN, HSININ, CHANG, CHI-KANG, FU, SHIHI, TSENG, YUN-HENG, WANG, YUING, CHEN, KAI-HSIUNG, CHU, JIA-HONG, CHENG, POUNG, SU, HSIANG-YU, CHEN, LONG-YI, CHEN, KUEI-SHUN
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An overlay-error-measurement method for a semiconductor device is provided. The method includes performing a diffraction-based-overlay-error measurement on a first test target of a substrate to respectively obtain first and second diffraction intensity differences corresponding to first and second superimposed structures of the first test target. The method further includes obtaining a third diffraction intensity difference corresponding to the first test target based on the average of the first and second diffraction intensity differences.