Plasma abatement of nitrous oxide from semiconductor process effluents

Embodiments of the present disclosure generally relate techniques for abating N2O gas present in the effluent of semiconductor manufacturing processes. In one embodiment, a method includes injecting hydrogen gas or ammonia gas into a plasma source, and an effluent containing N2O gas and the hydrogen...

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Bibliographische Detailangaben
Hauptverfasser:	VAN GOMPEL, JOSEPH A, HO, DUSTIN W, L'HEUREUX, JAMES, YUAN, ZHENG, DOWNEY, RYAN T
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CONTROLLING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PHYSICS REGULATING SEMICONDUCTOR DEVICES SEPARATION SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES TRANSPORTING
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Beschreibung
Zusammenfassung:	Embodiments of the present disclosure generally relate techniques for abating N2O gas present in the effluent of semiconductor manufacturing processes. In one embodiment, a method includes injecting hydrogen gas or ammonia gas into a plasma source, and an effluent containing N2O gas and the hydrogen or ammonia gas are energized and reacted to form an abated material. By using the hydrogen gas or the ammonia gas, the destruction and removal efficiency (DRE) of the N2O gas is at least 50 percent while the concentration of nitric oxide (NO) and/or nitrogen dioxide (NO2) in the abated material is substantially reduced, such as at most 5000 parts per million (ppm) by volume.