A method for ion implantation

A method for ion implantation is provided. The method provides an ion implantation with a multiple-geometric-orientation ion beam that accommodates a range of tilt angles. The range of tilt angles can be defined with a dose distribution specified across the range of tilt angles. The method comprises: acquiring ion implantation parameters, determining the number of exposure steps, selecting implantation parameters corresponding to the exposure steps, acquiring implantation data, defining a first implantation sequence, creating a multiple-geometric-orientation implant exposure sequence according to the first implantation sequence, and performing the ion implantation according to the multiple-geometric-orientation implant exposure sequence.