Heating device and substrate processing device

An object of the invention is to provide technology that can perform heat treatment of a wafer with favorable in-plane uniformity. During the period of temperature rise following mounting of a wafer W on a heating plate 23, the time required for the wafer W to reach a reference temperature is matched for each heating module 2 and each heated region, thereby aligning the temperature rise curves of the temperature transition profiles during the period of excess temperature rise. As a result, because the temperature transition profiles match in each heated region, and the integrated heat quantity in the period of excess temperature rise matches within the plane of the wafer W and across the heating modules 2, the line widths of the patterns of the wafers will also be aligned. Accordingly, heat treatment can be performed with favourable in-plane uniformity, both within the plane of the wafer W, and even among wafers W processed by different heating modules 2.