Method of manufacturing semiconductor device

A semiconductor device and method of manufacture comprise placing an etch stop layer of a material such as aluminum oxide over a conductive element, placing a dielectric layer over the etch stop layer, and placing a hardmask of a material such as titanium nitride over the dielectric layer. Openings...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHOU, CHUN-LI, CHEN, NAIIA, CHAO, CHUN-HUNG, CHENG, YU-LI, KUO, YENIU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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