Method of manufacturing semiconductor device

Method of manufacturing semiconductor device

A semiconductor device and method of manufacture comprise placing an etch stop layer of a material such as aluminum oxide over a conductive element, placing a dielectric layer over the etch stop layer, and placing a hardmask of a material such as titanium nitride over the dielectric layer. Openings...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHOU, CHUN-LI, CHEN, NAIIA, CHAO, CHUN-HUNG, CHENG, YU-LI, KUO, YENIU
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device and method of manufacture comprise placing an etch stop layer of a material such as aluminum oxide over a conductive element, placing a dielectric layer over the etch stop layer, and placing a hardmask of a material such as titanium nitride over the dielectric layer. Openings are formed to the etch stop layer, the hardmask material is selectively removed, and the material of the etch stop layer is then selectively removed to extend the openings through the etch stop layer.