Methods of forming self-aligned vias

Methods of forming self-aligned vias

Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create...

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Bibliographische Detailangaben
Hauptverfasser: ANTHIS, JEFFREY W, MALLICK, ABHIJIT BASU, THOMPSON, DAVID, SCHMIEGE, BENJAMIN, ROY, SUSMIT SINGHA, DUAN, ZI-QING
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.