Semiconductor device

Semiconductor device

A semiconductor device comprises a fin shaped structure, a shallow trench isolation, a diffusion break structure and a gate. The fin shaped structure is disposed in a substrate. The shallow trench isolation is disposed in the substrate to surround the fin shaped structure. The diffusion break struct...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TANG, TIEN-HAO, CHIU, HOU-JEN, CHAO, MEI-LING, LIN, YA-TING, SU, KUANNG
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device comprises a fin shaped structure, a shallow trench isolation, a diffusion break structure and a gate. The fin shaped structure is disposed in a substrate. The shallow trench isolation is disposed in the substrate to surround the fin shaped structure. The diffusion break structure is disposed in the fin shaped structure, and a gate is disposed across the fin shaped structure.