Interconnect structure for semiconductor devices with multiple power rails and redundancy

An interconnect structure for semiconductor devices includes first and second (or more) metallization layers, each having power rail(s), with a direct electrical connection between vertically adjacent power rail(s).

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Hauptverfasser:	NARASIMHA, SHREESH, JUSTISON, PATRICK RYAN, BOUCHE, GUILLAUME, KIM, BYOUNG-YOUP, CHILD JR., CRAIG MICHAEL, STEPHENS, JASON EUGENE
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	NARASIMHA, SHREESH JUSTISON, PATRICK RYAN BOUCHE, GUILLAUME KIM, BYOUNG-YOUP CHILD JR., CRAIG MICHAEL STEPHENS, JASON EUGENE
description	An interconnect structure for semiconductor devices includes first and second (or more) metallization layers, each having power rail(s), with a direct electrical connection between vertically adjacent power rail(s).
format	Patent
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language	chi ; eng
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Interconnect structure for semiconductor devices with multiple power rails and redundancy
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