Interconnect structure for semiconductor devices with multiple power rails and redundancy

Interconnect structure for semiconductor devices with multiple power rails and redundancy

An interconnect structure for semiconductor devices includes first and second (or more) metallization layers, each having power rail(s), with a direct electrical connection between vertically adjacent power rail(s).

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Bibliographische Detailangaben
Hauptverfasser: NARASIMHA, SHREESH, JUSTISON, PATRICK RYAN, BOUCHE, GUILLAUME, KIM, BYOUNG-YOUP, CHILD JR., CRAIG MICHAEL, STEPHENS, JASON EUGENE
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An interconnect structure for semiconductor devices includes first and second (or more) metallization layers, each having power rail(s), with a direct electrical connection between vertically adjacent power rail(s).