High resistivity single crystal silicon ingot and wafer having improved mechanical strength

High resistivity single crystal silicon ingot and wafer having improved mechanical strength

A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1*1014 atoms/cm3 and/or germanium at a concentration of at least about 1*1019 atoms/cm3, interstitial oxygen at a concentratio...

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Bibliographische Detailangaben
Hauptverfasser: LEE, HYUNG-MIN, FALSTER, ROBERT J, HUDSON, CARISSIMA M, BASAK, SOUBIR, PEIDOUS, IGOR, KIM, BYUNGUN
Format: Patent
Sprache:chi ; eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1*1014 atoms/cm3 and/or germanium at a concentration of at least about 1*1019 atoms/cm3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.