Deposition method of passivation film for light emitting diode

This invention is related with a method of depositing a passivation layer of a light emitting device, the method comprising: a step of depositing a first protective film on the upper portion of the light emitting device of the substrate by atomic layer deposition; and a step of depositing at least o...

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Bibliographische Detailangaben
Hauptverfasser:	SHIM, WOO-PIL, LEE, HONG-JAE, LEE, WOO-JIN, LEE, DON-HEE, KIM, JONG-HWAN, YOON, SUNG-YEAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	This invention is related with a method of depositing a passivation layer of a light emitting device, the method comprising: a step of depositing a first protective film on the upper portion of the light emitting device of the substrate by atomic layer deposition; and a step of depositing at least one additional protective film on the upper portion of the first protective film by chemical vapor deposition.