Plasma processing apparatus

The present invention provides a plasma processing apparatus capable of shortening the return current path and ensuring the symmetry thereof. One aspect of the plasma processing apparatus of the present invention includes a chamber body, a carrier, a high frequency electrode, a plurality of groundin...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YAJIMA, TAKAHIRO, KATO, YUKO, UE, YOSHINOBU, OKANO, SHUICHI, TAMARU, YOSHIHISA, JINBO, YOSUKE, OKAYAMA, SATOHIRO, NAKAMURA, FUMIO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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