IO-IZO (Indium Zinc Oxide) based sputtering target and method for producing same

The invention relates to an IO-IZO (Indium Zinc Oxide) based sputtering target and method for producing same. The sputtering target contains In, Zn and O and is characterized in that the atom ratio of Zn and In meets a formula: 0.05 ≤ Zn/(In+Zn) ≤ 0.30 and the standard deviation of the body resistiv...

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Bibliographische Detailangaben
1. Verfasser:	KAKENO, TAKASHI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ARTIFICIAL STONE CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	The invention relates to an IO-IZO (Indium Zinc Oxide) based sputtering target and method for producing same. The sputtering target contains In, Zn and O and is characterized in that the atom ratio of Zn and In meets a formula: 0.05 ≤ Zn/(In+Zn) ≤ 0.30 and the standard deviation of the body resistivity in the sputtering face of the target is below 1.0m Omega*cm. The invention provides a manufacture method for producing the IO-IZO (Indium Zinc Oxide) based sputtering target with small sintering body warping and inhibiting in-plane deviation of body resistivity caused by grinding used for reducing warping.