Memory device and method for programming multi-level non-volatile memory cells

Inventive aspects include a memory device having one or more memory pages including a plurality of memory cells each having a plurality of programmable state levels. The memory device includes a memory control logic section including a program logic section and page-level reprogram state metadata. The program logic section may program the plurality of memory cells dependent on the page-level reprogram state metadata. The program logic section may program a first state level, a second state level, and a third state level of each of the memory cells in consecutive programming operations of the plurality of memory cells dependent on the page-level reprogram state metadata, without requiring any erase operations or read operations during or between the programming operations.