Projection exposure apparatus and method for measuring a projection lens

Microlithographic projection exposure apparatus (100), having a projection lens (150) for imaging an object plane (155) onto an image plane (156), wherein an immersion liquid is at least temporarily provided during operation of the projection exposure apparatus (100) between the projection lens (150...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SCHADT, FRANK, FOCA, EUGEN, HEMPELMANN, UWE, SCHLEICHER, FRANK
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TESTING TESTING STATIC OR DYNAMIC BALANCE OF MACHINES ORSTRUCTURES TESTING STRUCTURES OR APPARATUS NOT OTHERWISE PROVIDED FOR
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Microlithographic projection exposure apparatus (100), having a projection lens (150) for imaging an object plane (155) onto an image plane (156), wherein an immersion liquid is at least temporarily provided during operation of the projection exposure apparatus (100) between the projection lens (150) and the image plane (156), wherein a measurement structure (121) is arranged in the immersion liquid, wherein the measurement structure (121) is configured to generate a measurement pattern, having a measurement device (130, 160) for measuring the measurement pattern, and wherein the measurement structure (121) has an absorption layer (125) (125) comprising silicon oxide and/or silicon oxynitride and/or nitride.