Manufacturing method of single crystal silicon

According to a predetermined condition, the relationship among the diameter (D) of a single crystal (C) when pulled up with CZ method, the horizontal magnetic field (G) to be applied to molten liquid (M), the crystal rotation speed (V) of the single crystal (C) when pulled up, and oxygen concentrati...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SAITO, YASUHIRO, TANABE, KAZUMI, SAISHOJI, TOSHIAKI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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