Manufacturing method of single crystal silicon

According to a predetermined condition, the relationship among the diameter (D) of a single crystal (C) when pulled up with CZ method, the horizontal magnetic field (G) to be applied to molten liquid (M), the crystal rotation speed (V) of the single crystal (C) when pulled up, and oxygen concentrati...

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Bibliographische Detailangaben
Hauptverfasser:	SAITO, YASUHIRO, TANABE, KAZUMI, SAISHOJI, TOSHIAKI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	According to a predetermined condition, the relationship among the diameter (D) of a single crystal (C) when pulled up with CZ method, the horizontal magnetic field (G) to be applied to molten liquid (M), the crystal rotation speed (V) of the single crystal (C) when pulled up, and oxygen concentration distribution feature on the outer circumference portion of the wafer is obtained in advance. The shortest diameter of the single crystal when pulled up is obtained from the threshold value of the oxygen concentration distribution feature on the outer circumference portion of the wafer, the threshold value of the horizontal magnetic field, the threshold value of the crystal rotation speed of the single crystal when pulled up, and the relationship. The shortest diameter of the single crystal obtained is used as a target diameter, and single crystal silicon is produced under the predetermined condition.