Substrate processing device, substrate processing method and computer readable recording medium

This invention aims to highly accurately determine completion of polishing of wafer with respect to each wafer. The processing method comprises Step 1 through Step 5. In Step 1, the initial state of the processed surface of a wafer is obtained. After Step 1, a coating film is formed on the wafer in Step 2. In Step 3, under a state that a polishing member is in contact with the processed surface of the wafer, the processed surface of the wafer is polished with the polishing member based on initial polishing conditions. After Step 3, the processed state of the processed surface of the wafer is obtained in Step 4. In Step 5, based on the initial state and the processed state, completion of polishing, insufficient polishing or excessive polishing is determined.