Deposition method of passivation film for light emitting diode

Deposition method of passivation film for light emitting diode

This invention is related with a method of depositing a passivation layer of a light emitting device, the method comprising: a step of depositing a first inorganic protective film on a light emitting element of the substrate; and a step of depositing a second inorganic protective film having an inte...

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Hauptverfasser: SHIM, WOO-PIL, LEE, HONG-JAE, LEE, WOO-JIN, LEE, DON-HEE, KIM, JONG-HWAN, YOON, SUNG-YEAN
Format: Patent
Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator SHIM, WOO-PIL
LEE, HONG-JAE
LEE, WOO-JIN
LEE, DON-HEE
KIM, JONG-HWAN
YOON, SUNG-YEAN
description This invention is related with a method of depositing a passivation layer of a light emitting device, the method comprising: a step of depositing a first inorganic protective film on a light emitting element of the substrate; and a step of depositing a second inorganic protective film having an internal stress relatively lower than that of the first inorganic protective film on the first inorganic protective film.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Deposition method of passivation film for light emitting diode
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