Substrate processing method and memory medium

To provide a technique which suppresses taking N atoms in a Ti film upon depositing the Ti film on a wafer through plasma CVD. Plasma of an Hgas is used to remove components including TiCland Clin a processing container 20 after depositing a Ti film 103 on a surface of a Si film 101 of a wafer W. Co...

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Bibliographische Detailangaben
Hauptverfasser:	SAKUMA, TAKASHI, NOGUCHI, KYOHEI, KOBAYASHI, TAKASHI, YOKOYAMA, OSAMU, URANO, TOMONARI, WAKABAYASHI, SATOSHI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To provide a technique which suppresses taking N atoms in a Ti film upon depositing the Ti film on a wafer through plasma CVD. Plasma of an Hgas is used to remove components including TiCland Clin a processing container 20 after depositing a Ti film 103 on a surface of a Si film 101 of a wafer W. Consequently, it can be suppressed to take N in the Ti film 103. Therefore, reaction of silicidation of Ti on a boundary surface between the Ti film 103 and Si film 101 is not impeded. Further, by using plasma of an Hgas, components including TiCland Clafter the wafer W is carried out can be removed and N in the processing container 20 can be suppressed. In precoating applied to an inner surface of the processing container 20, too, by depositing the Ti film so as to cover the surface of the TiN film, it can be suppressed to take N in the Ti film 103 upon depositing the Ti film 103 on the surface of the wafer W.