Polishing composition containing silicon dioxide particles, glycol ether compound, and water

The present invention provides a polishing composition which can polish sapphire wafers with excellent polishing speed. The polishing composition contains silicon dioxide (SiO2) particles, glycol ether compound, and water. The content of the glycol ether compound contained in the polishing compositi...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	EZAWA, SHUNJI, MORIYAMA, KAZUKI, DAITO, TAKESHI, CHINEN, MIKA
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The present invention provides a polishing composition which can polish sapphire wafers with excellent polishing speed. The polishing composition contains silicon dioxide (SiO2) particles, glycol ether compound, and water. The content of the glycol ether compound contained in the polishing composition is between 0.1% by mass or more and 10% by mass or less.