Semiconductor device

A semiconductor device is provided. The semiconductor device includes a silicon substrate, at least one source/drain portion and a cap layer. The source/drain portion can be disposed within the silicon substrate, and the source/drain portion comprises at least one n-type dopant-containing portion. T...

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Bibliographische Detailangaben
Hauptverfasser: KUO, CHIEN-I, LI, CHII-HORNG, TSENG, YI-KAI, LI, YING-WEI, SU, LILLY LI-LI, SU, CHIENANG
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A semiconductor device is provided. The semiconductor device includes a silicon substrate, at least one source/drain portion and a cap layer. The source/drain portion can be disposed within the silicon substrate, and the source/drain portion comprises at least one n-type dopant-containing portion. The cap layer overlies and covers the source/drain portion, and the cap layer includes silicon carbide (SiC) or silicon germanium (SiGe) with relatively low germanium concentration, thereby preventing n-type dopants in the at least one n-type dopant-containing portion of the source/drain portion from being degraded after sequent thermal and cleaning processes.