Etching device and etching method

The present invention provides an etching device and an etching method. The etching device comprises an etching chamber (1; 1a) and a chuck (CH) located therein for mounting a substrate (S) to be etched, a plasma generating device (C) surrounding the etching chamber (1; 1a) in a region (1a) and a gas-nozzle distribution device (10) for introducing etching gas, which is arranged above the chuck (CH) in such a way that an etching gas stream (GS) is directed substantially perpendicularly onto a surface (OF) of the substrate (S) to be etched. A moving mechanism allows the distance between the gas-nozzle distribution device (10) and the chuck (CH) to be changed in dependence on the etching mode.