Plasma deposition apparatus

The present invention relates to a plasma deposition apparatus and, more particularly, to a plasma deposition apparatus in which an electrode main body and a magnet both of which constitute a cathode electrode can be independently rotated. The plasma deposition apparatus can efficiently control a po...

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Bibliographische Detailangaben
Hauptverfasser:	JUNG, SUNG-HUN, AN, KYOUNG-JOON, KIM, CHAN-HO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS
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Beschreibung
Zusammenfassung:	The present invention relates to a plasma deposition apparatus and, more particularly, to a plasma deposition apparatus in which an electrode main body and a magnet both of which constitute a cathode electrode can be independently rotated. The plasma deposition apparatus can efficiently control a position at which a magnetic field is formed according to various deposition conditions. The plasma apparatus includes a cathode electrode drive unit that is installed outside a vacuum chamber and detachably coupled to the cathode electrode from the outside of the vacuum chamber, thereby maximizing a magnetic field generation area within the vacuum chamber, and enabling easy maintenance.