Photoelectric semiconductor device
The instant disclosure provides a photoelectric semiconductor device including a substrate, a light-emitting diode chip, a wavelength converting material, an encapsulant, and a protective layer. The light-emitting diode chip is disposed on the substrate The encapsulant has a hardness of higher than...
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creator | CHEN, YI-HSUAN HSU, SHIHANG |
description | The instant disclosure provides a photoelectric semiconductor device including a substrate, a light-emitting diode chip, a wavelength converting material, an encapsulant, and a protective layer. The light-emitting diode chip is disposed on the substrate The encapsulant has a hardness of higher than D50 or a moisture-permeable value of less than 10 g/m2,24 hrs, and the wavelength converting mixture includes a first wavelength converting compound having a main peak wavelength in green spectrum and a second wavelength converting compound having a main peak wavelength in red spectrum which are phosphor materials having a FWHM of less than 50 nm. The photoelectric semiconductor device provided by the instant disclosure exhibits improved NTSC, brightness and reliability. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW201731128A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW201731128A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW201731128A3</originalsourceid><addsrcrecordid>eNrjZFAKyMgvyU_NSU0uKcpMVihOzc1Mzs9LKU0uyS9SSEkty0xO5WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8SHhRgaG5saGhkYWjsbEqAEA8FQmsw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Photoelectric semiconductor device</title><source>esp@cenet</source><creator>CHEN, YI-HSUAN ; HSU, SHIHANG</creator><creatorcontrib>CHEN, YI-HSUAN ; HSU, SHIHANG</creatorcontrib><description>The instant disclosure provides a photoelectric semiconductor device including a substrate, a light-emitting diode chip, a wavelength converting material, an encapsulant, and a protective layer. The light-emitting diode chip is disposed on the substrate The encapsulant has a hardness of higher than D50 or a moisture-permeable value of less than 10 g/m2,24 hrs, and the wavelength converting mixture includes a first wavelength converting compound having a main peak wavelength in green spectrum and a second wavelength converting compound having a main peak wavelength in red spectrum which are phosphor materials having a FWHM of less than 50 nm. The photoelectric semiconductor device provided by the instant disclosure exhibits improved NTSC, brightness and reliability.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170901&DB=EPODOC&CC=TW&NR=201731128A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170901&DB=EPODOC&CC=TW&NR=201731128A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHEN, YI-HSUAN</creatorcontrib><creatorcontrib>HSU, SHIHANG</creatorcontrib><title>Photoelectric semiconductor device</title><description>The instant disclosure provides a photoelectric semiconductor device including a substrate, a light-emitting diode chip, a wavelength converting material, an encapsulant, and a protective layer. The light-emitting diode chip is disposed on the substrate The encapsulant has a hardness of higher than D50 or a moisture-permeable value of less than 10 g/m2,24 hrs, and the wavelength converting mixture includes a first wavelength converting compound having a main peak wavelength in green spectrum and a second wavelength converting compound having a main peak wavelength in red spectrum which are phosphor materials having a FWHM of less than 50 nm. The photoelectric semiconductor device provided by the instant disclosure exhibits improved NTSC, brightness and reliability.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAKyMgvyU_NSU0uKcpMVihOzc1Mzs9LKU0uyS9SSEkty0xO5WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8SHhRgaG5saGhkYWjsbEqAEA8FQmsw</recordid><startdate>20170901</startdate><enddate>20170901</enddate><creator>CHEN, YI-HSUAN</creator><creator>HSU, SHIHANG</creator><scope>EVB</scope></search><sort><creationdate>20170901</creationdate><title>Photoelectric semiconductor device</title><author>CHEN, YI-HSUAN ; HSU, SHIHANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW201731128A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHEN, YI-HSUAN</creatorcontrib><creatorcontrib>HSU, SHIHANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHEN, YI-HSUAN</au><au>HSU, SHIHANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Photoelectric semiconductor device</title><date>2017-09-01</date><risdate>2017</risdate><abstract>The instant disclosure provides a photoelectric semiconductor device including a substrate, a light-emitting diode chip, a wavelength converting material, an encapsulant, and a protective layer. The light-emitting diode chip is disposed on the substrate The encapsulant has a hardness of higher than D50 or a moisture-permeable value of less than 10 g/m2,24 hrs, and the wavelength converting mixture includes a first wavelength converting compound having a main peak wavelength in green spectrum and a second wavelength converting compound having a main peak wavelength in red spectrum which are phosphor materials having a FWHM of less than 50 nm. The photoelectric semiconductor device provided by the instant disclosure exhibits improved NTSC, brightness and reliability.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Photoelectric semiconductor device |
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