Photoelectric semiconductor device

The instant disclosure provides a photoelectric semiconductor device including a substrate, a light-emitting diode chip, a wavelength converting material, an encapsulant, and a protective layer. The light-emitting diode chip is disposed on the substrate The encapsulant has a hardness of higher than...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHEN, YI-HSUAN, HSU, SHIHANG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The instant disclosure provides a photoelectric semiconductor device including a substrate, a light-emitting diode chip, a wavelength converting material, an encapsulant, and a protective layer. The light-emitting diode chip is disposed on the substrate The encapsulant has a hardness of higher than D50 or a moisture-permeable value of less than 10 g/m2,24 hrs, and the wavelength converting mixture includes a first wavelength converting compound having a main peak wavelength in green spectrum and a second wavelength converting compound having a main peak wavelength in red spectrum which are phosphor materials having a FWHM of less than 50 nm. The photoelectric semiconductor device provided by the instant disclosure exhibits improved NTSC, brightness and reliability.