Photoelectric semiconductor device
The instant disclosure provides a photoelectric semiconductor device including a substrate, a light-emitting diode chip, a wavelength converting material, an encapsulant, and a protective layer. The light-emitting diode chip is disposed on the substrate The encapsulant has a hardness of higher than...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The instant disclosure provides a photoelectric semiconductor device including a substrate, a light-emitting diode chip, a wavelength converting material, an encapsulant, and a protective layer. The light-emitting diode chip is disposed on the substrate The encapsulant has a hardness of higher than D50 or a moisture-permeable value of less than 10 g/m2,24 hrs, and the wavelength converting mixture includes a first wavelength converting compound having a main peak wavelength in green spectrum and a second wavelength converting compound having a main peak wavelength in red spectrum which are phosphor materials having a FWHM of less than 50 nm. The photoelectric semiconductor device provided by the instant disclosure exhibits improved NTSC, brightness and reliability. |
---|