Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a first fin-shaped structure and a second fin-shaped structure on the substrate; forming a first epitaxial layer on the first fin-shaped structure and a second epitaxial layer...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LIU, YINGNG, LEE, YI-HUI, HUNG, CHING-WEN, HUANG, CHIH-SEN, WU, JIA-RONG
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a first fin-shaped structure and a second fin-shaped structure on the substrate; forming a first epitaxial layer on the first fin-shaped structure and a second epitaxial layer on the second fin-shaped structure; and forming a cap layer on the first epitaxial layer and the second epitaxial layer, in which a distance between the first epitaxial layer and the second epitaxial layer is between twice the thickness of the cap layer and four times the thickness of the cap layer.