Semiconductor device

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a light sensing feature, a negative oxide layer, a gate dielectric layer and a transfer gate. The light sensing feature is configured in the substrate to detect an incoming radiatio...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	WENG, SSUIANG, LIN, YEN-LIANG, HSU, YUNG-LUNG, HSIAO, CHIN-HSUN, WEI, CHIA-YU, CHEN, HSINI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a light sensing feature, a negative oxide layer, a gate dielectric layer and a transfer gate. The light sensing feature is configured in the substrate to detect an incoming radiation. The negative oxide layer is over the light sensing feature. The gate dielectric layer is over the negative oxide layer. The transfer gate is over the gate dielectric layer.