Techniques to prevent film cracking in thermally cured dielectric film, and associated configurations

Embodiments of the present disclosure describe techniques to prevent film cracking in thermally cured dielectric film, and associated configurations. A dielectric film may be formed on a patterned metal layer and a substrate on which the patterned metal layer is disposed. A photo-patterned dielectric resist film may be formed on the dielectric film, while providing an opening in the dielectric resist film over the metal layer. A first curing process may be performed to remove a solvent from the dielectric resist film. An exposed portion of the dielectric film, that is disposed in the opening, may then be removed. A second curing process may be performed after the exposed portion of the dielectric film is removed, to polymerize the dielectric resist film. Other embodiments may be described and/or claimed.