Contacting SOI substrates

An integrated circuit is provided including a semiconductor bulk substrate, a buried oxide layer formed on the semiconductor bulk substrate, a plurality of cells, each cell having a transistor device, formed over the buried oxide layer, a plurality of gate electrode lines running through the cells a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JAIN, NAVNEET, LORENZ, INGOLF, HENSEL, ULRICH, ZIER, MICHAEL, HAUFE, CHRISTIAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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