Semiconductor device and method for forming the same
Semiconductor devices and a method for forming the same are provided. In various embodiments, a method for forming a semiconductor device includes receiving a semiconductor substrate including a channel. An atmosphere-modulation layer is formed over the channel. An annealing process is performed to...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | Semiconductor devices and a method for forming the same are provided. In various embodiments, a method for forming a semiconductor device includes receiving a semiconductor substrate including a channel. An atmosphere-modulation layer is formed over the channel. An annealing process is performed to form an interfacial layer between the channel and the atmosphere-modulation layer. |
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