Image capture element and method for manufacturing same, and electronic device

The present technology relates to a back-surface irradiated type image capture element having an organic photoelectric conversion film, with which image capture element color mixing can be prevented and a dynamic range can be ensured, a method for manufacturing the same, and an electronic device. An image capture element according to an aspect of the present technology includes: a photoelectric conversion film provided on one side of a semiconductor substrate; a pixel separation unit formed in an inter-pixel region; and a through-electrode that transmits a signal, corresponding to a charge obtained by photoelectric conversion in the photoelectric conversion film, to a wiring layer formed on the other side of the semiconductor substrate, the through-electrode being formed in the inter-pixel region. The present technology may be applied to a back-surface irradiated type CMOS image sensor.