Semiconductor structure and manufacturing method thereof

A method of manufacturing a semiconductor structure, comprising: receiving a first substrate including a first surface, a second surface opposite to the first surface and a plurality of conductive bumps disposed over the first surface; receiving a second substrate; disposing an adhesive over the fir...

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Bibliographische Detailangaben
Hauptverfasser: KUO, CHENG-YU, LIU, KUOIO, YANG, SHENG-PIN, WANG, HSIING, LIAO, DE-DUI, HUANG, TSUNG-LUNG, CHANG, KUO-PIN, LIU, CHUNG-SHI, WU, KAI-DI, LEI, YI-YANG, KALNITSKY, ALEXANDER, HUANG, ISAAC, HSIEH, CHING-HUA, KU, CHIN-YU, YU, CHEN-HUA
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:A method of manufacturing a semiconductor structure, comprising: receiving a first substrate including a first surface, a second surface opposite to the first surface and a plurality of conductive bumps disposed over the first surface; receiving a second substrate; disposing an adhesive over the first substrate or the second substrate; heating the adhesive in a first ambiance; bonding the first substrate with the second substrate by applying a force of less than about 10,000N upon the first substrate or the second substrate and heating the adhesive in a second ambiance; and thinning down a thickness of the first substrate from the second surface.