Mask assembly and photolithography process using the same

A mask assembly including a first mask and a second mask is provided. The first mask includes a plurality of paralleled first main features, a plurality of first sub-resolution assistant features (SRAFs) and a plurality of second SRAFs. The second SRAFs are separately disposed at a side of the first...

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Bibliographische Detailangaben
1. Verfasser:	HUNG, YUNG-WEN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	A mask assembly including a first mask and a second mask is provided. The first mask includes a plurality of paralleled first main features, a plurality of first sub-resolution assistant features (SRAFs) and a plurality of second SRAFs. The second SRAFs are separately disposed at a side of the first main features. The first SRAFs are separately disposed between the second SRAFs and the first main features. The extending direction of the first main features is parallel with that of the second SRAFs. The second mask includes a plurality of paralleled second main features. When the first mask and the second mask are individually disposed above a negative-type photoresist layer, the second main features intersect with the first main features and the second main features overlap with the first SRAFs.