Surface-tensioned sapphire plate

The present invention relates to a surface-tensioned sapphire plate and a corresponding manufacturing process, wherein the plate comprises a planar sapphire substrate (10) and at least one layer (12) disposed on the surface (11) of the substrate (10) for tensing the substrate (10) and wherein the la...

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Bibliographische Detailangaben
Hauptverfasser:	KRESS, MARKUS, BECKMANN, RUDOLF
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM METALLURGY PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The present invention relates to a surface-tensioned sapphire plate and a corresponding manufacturing process, wherein the plate comprises a planar sapphire substrate (10) and at least one layer (12) disposed on the surface (11) of the substrate (10) for tensing the substrate (10) and wherein the layer (12) comprises at least 50 wt.-% of Al2O3.